TIP101G

TRANS NPN DARL 80V 8A TO220

Manufacturer: onsemi

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onsemi TIP101G is an NPN Darlington bipolar junction transistor designed for power switching and amplification applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 8A. Featuring a high DC current gain (hFE) of a minimum of 1000 at 3A and 4V, the TIP101G is suitable for driving higher current loads with minimal base drive. The saturation voltage (Vce Sat) is a maximum of 2.5V at 80mA base current and 8A collector current. With a maximum power dissipation of 2W, this device is packaged in a TO-220-3 through-hole configuration, facilitating ease of mounting. The operating temperature range is from -65°C to 150°C. The TIP101G finds application in industrial power supplies, motor control circuits, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:

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Technical Details:

Packaging	Tube
Package / Case	TO-220-3
Mounting Type	Through Hole
Transistor Type	NPN - Darlington
Operating Temperature	-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	2.5V @ 80mA, 8A
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V
Frequency - Transition	-
Supplier Device Package	TO-220
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Power - Max	2 W