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TIP101

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TIP101

TRANS NPN DARL 80V 8A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi TIP101 is an NPN Darlington bipolar junction transistor designed for high current applications. This component features a collector-emitter breakdown voltage of 80 V and a continuous collector current (Ic) rating of 8 A. With a maximum power dissipation of 2 W and a saturation voltage (Vce Sat) of 2.5 V at 80 mA/8 A, it offers efficient power handling. The device exhibits a minimum DC current gain (hFE) of 1000 at 3 A and 4 V. Packaged in a TO-220-3 configuration for through-hole mounting, the TIP101 is suitable for applications in power switching and amplification within industrial and consumer electronics. It operates across a temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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