SS9013HBU
TRANS NPN 20V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SS9013HBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 20V collector-emitter breakdown voltage (Vce(max)) and a maximum collector current (Ic(max)) of 500mA, with a power dissipation capability of 625mW. The DC current gain (hFE) is specified at a minimum of 144 at 50mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 600mV at 50mA base current and 500mA collector current. The collector cutoff current (Icbo) is a maximum of 100nA. This device is housed in a TO-92-3 package for through-hole mounting and operates at junction temperatures up to 150°C. It is commonly utilized in consumer electronics and general industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 144 @ 50mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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