SS9013GTA
TRANS NPN 20V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SS9013GTA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 20V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. The device offers a minimum DC current gain (hFE) of 112 at 50mA collector current and 1V collector-emitter voltage. Power dissipation is rated at 625mW. The SS9013GTA is housed in a TO-92-3 (TO-226-3) package with formed leads, suitable for through-hole mounting. It operates within a junction temperature range of up to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 112 @ 50mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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