SS9011GBU
TRANS NPN 30V 0.03A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's SS9011GBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 30mA. With a transition frequency of 2MHz and a maximum power dissipation of 400mW, it is suitable for use in consumer electronics and industrial control systems. The SS9011GBU is housed in a TO-92-3 package, facilitating through-hole mounting. Key parameters include a minimum DC current gain (hFE) of 72 at 1mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 300mV at 1mA base current and 10mA collector current. The device exhibits a collector cutoff current of 100nA (ICBO) and operates within a temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 72 @ 1mA, 5V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 400 mW |
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