SS9011FBU
TRANS NPN 30V 0.03A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SS9011FBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30 V and a continuous collector current capability of 30 mA. Its transition frequency is rated at 2 MHz, with a maximum power dissipation of 400 mW. The device offers a minimum DC current gain (hFE) of 54 at 1mA collector current and 5V collector-emitter voltage. The Vce(sat) is specified at a maximum of 300mV for a 1mA base current and 10mA collector current. The SS9011FBU is packaged in a TO-92-3 through-hole configuration and operates up to 150°C. This transistor is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 54 @ 1mA, 5V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 400 mW |
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