SS8050DTA
TRANS NPN 25V 1.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi SS8050DTA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching. This device features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 1.5A. With a DC current gain (hFE) of at least 160 at 100mA and 1V, it offers efficient amplification. The transition frequency is 100MHz, making it suitable for moderate frequency applications. The SS8050DTA dissipates a maximum power of 1W and operates within an industrial temperature range of -55°C to 150°C. It is supplied in a TO-92-3 through-hole package and is available in Cut Tape (CT) packaging. This component is commonly utilized in consumer electronics, industrial control systems, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1 W |
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