SNSS40600CF8T1G
TRANS PNP 40V 6A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi SNSS40600CF8T1G is a PNP bipolar junction transistor (BJT) designed for high-current switching and amplification applications. This component features a maximum collector current (Ic) of 6A and a collector-emitter breakdown voltage (Vce(max)) of 40V. With a minimum DC current gain (hFE) of 220 at 1A and 2V, and a transition frequency of 100MHz, it is suitable for demanding power management and control circuits. The device offers a low saturation voltage of 220mV at 400mA and 4A, minimizing power dissipation. Housed in an 8-SMD, Flat Leads ChipFET™ package for efficient surface mounting and thermal performance, the SNSS40600CF8T1G is commonly utilized in automotive, industrial automation, and power supply designs. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 830 mW |
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