SMBT35200MT1G
TRANS PNP 35V 2A 6TSOPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, SMBT35200MT1G, offers robust performance for demanding applications. This device features a 35V collector-emitter breakdown voltage and a continuous collector current capability of 2A. With a transition frequency of 100MHz and a maximum power dissipation of 625mW, it is suitable for general-purpose amplification and switching in automotive, industrial, and consumer electronics. The high DC current gain (hFE) of 100 at 1.5A and 1.5V, coupled with a low Vce(sat) of 310mV at 20mA and 2A, ensures efficient operation. Packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting, it operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 6-TSOP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
| Power - Max | 625 mW |
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