SFT1202-E
TRANS NPN 150V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SFT1202-E is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of up to 2A. It features a maximum power dissipation of 1W and a transition frequency of 140MHz, making it suitable for general-purpose switching and amplification. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA and 5V, with a Vce saturation of 165mV at 100mA and 1A. The collector cutoff current (ICBO) is a maximum of 1µA. Operating at a junction temperature up to 150°C, this transistor is commonly utilized in power supply, industrial control, and consumer electronics sectors. It is supplied in a TP package, specifically TO-251-3 Short Leads, also known as IPAK or TO-251AA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 165mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
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