SBCP68T1G
TRANS NPN 20V 1A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi SBCP68T1G is an NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 20V and a continuous collector current capability of 1A, with a maximum power dissipation of 1.5W. The transition frequency is specified at 60MHz, and it exhibits a minimum DC current gain (hFE) of 85 at 500mA and 1V. The transistor is qualified to AEC-Q101 standards and is suitable for automotive applications. It is supplied in a SOT-223 surface mount package, presented on tape and reel. Key operating parameters include a collector cutoff current of 10µA (ICBO) and a Vce(sat) of 500mV at 100mA collector current. The operating temperature range is from -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SOT-223 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1.5 W |
| Qualification | AEC-Q101 |