SBC847BWT1G-M02
SBC847BW - SMALL SIGNAL BIPOLARManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi SBC847BWT1G-M02 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. The device exhibits a transition frequency of 300MHz, suitable for high-frequency signal processing. With a power dissipation rating of 310mW and a minimum DC current gain (hFE) of 200 at 2mA and 5V, the SBC847BWT1G-M02 offers robust performance characteristics. The transistor is housed in a compact SC-70-3 (SOT323) surface-mount package, facilitating dense board layouts. It operates across an industrial temperature range of -55°C to 150°C. This component finds application in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 310 mW |