SBC847BLT1G-M01
SBC847 - TRANS BJTS NPN 45VManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SBC847BLT1G-M01 is a high-performance NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA, with a maximum power dissipation of 310mW. The SBC847BLT1G-M01 offers a transition frequency of 300MHz, making it suitable for various signal amplification and switching tasks. Its minimum DC current gain (hFE) is 200 at 2mA and 5V. The transistor is housed in a compact SOT-23-3 (TO-236) package, ideal for space-constrained designs. Typical applications include general-purpose amplification and switching circuits in consumer electronics and industrial automation. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 310 mW |
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