SB29003TF
TRANS NPN 400V 0.3A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi SB29003TF is an NPN bipolar junction transistor (BJT) designed for high voltage applications. It offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 300mA. This device features a maximum power dissipation of 2W and a low collector cutoff current of 500nA. The DC current gain (hFE) is a minimum of 50 at 10mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at 750mV maximum for a base current of 5mA and a collector current of 50mA. The SB29003TF is housed in a SOT-223-4 surface mount package (TO-261-4, TO-261AA) and operates at junction temperatures up to 150°C. This component is commonly utilized in power supply circuits, lighting applications, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 2 W |
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