PZT3906T1G
TRANS PNP 40V 0.2A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PZT3906T1G is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200mA. The PZT3906T1G exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage. Its transition frequency reaches 250MHz, supporting a variety of signal amplification and switching functions. The device is rated for a maximum power dissipation of 1.5W and operates within an ambient temperature range of -55°C to 150°C. Packaged in a SOT-223 (TO-261) surface mount package and supplied on tape and reel, this transistor is suitable for use in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.5 W |
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