PN5139
TRANS PNP 20V 0.1A TO92SManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PN5139, a PNP Bipolar Junction Transistor (BJT), offers a collector current (Ic) capability of up to 100 mA with a maximum collector-emitter voltage (Vce) breakdown of 20 V. This device features a DC current gain (hFE) of a minimum of 40 at 1 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 150 mV for a base current (Ib) of 100 µA and a collector current (Ic) of 1 mA. With a maximum power dissipation of 625 mW, the PN5139 is housed in a TO-92S (TO-226-3, TO-92-3 Short Body) package with through-hole mounting. It is suitable for applications in consumer electronics and industrial control systems where low-power switching and amplification are required.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging:Download Free CAD Model:
Technical Details:
| Packaging | |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92S |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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