PN5135
TRANS NPN 25V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PN5135, an NPN Bipolar Junction Transistor (BJT), offers a 25V collector-emitter breakdown voltage and a maximum collector current of 200mA. This device features a minimum DC current gain (hFE) of 50 at 10mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 1V at 10mA base current and 100mA collector current. The PN5135 dissipates a maximum of 625mW and operates at junction temperatures up to 150°C. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, it is supplied in bulk. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 300nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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