PN5134
TRANS NPN 10V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN5134 is a bipolar junction transistor (BJT) featuring an NPN configuration. This device is designed for through-hole mounting within a standard TO-92-3 package. It offers a collector-emitter breakdown voltage of 10 V and can handle a continuous collector current of up to 500 mA. The maximum power dissipation is rated at 625 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 10 mA collector current and 1 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250 mV at 1 mA base current and 10 mA collector current. The collector cutoff current is specified at a maximum of 400 nA. This component finds application in various industrial and commercial electronics, including general-purpose amplification and switching circuits. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 10 V |
| Power - Max | 625 mW |