PN5133
TRANS NPN 18V TO92SManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PN5133 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage (Vce) of 18 V and a maximum power dissipation of 625 mW. The PN5133 exhibits a minimum DC current gain (hFE) of 60 at 1mA collector current and 5V Vce, with a saturation voltage (Vce(sat)) of 400mV at 100µA base current and 1mA collector current. It is housed in a TO-92S (TO-226-3, TO-92-3 Short Body) package suitable for through-hole mounting. This component is commonly utilized in consumer electronics and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging:Download Free CAD Model:
Technical Details:
| Packaging | |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92S |
| Voltage - Collector Emitter Breakdown (Max) | 18 V |
| Power - Max | 625 mW |
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