PN4888
TRANS PNP 150V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN4888 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage (Vce) of 150V and a continuous collector current (Ic) capability of 100 mA. With a minimum DC current gain (hFE) of 40 at 10mA collector current and 10V Vce, it offers reliable amplification characteristics. The PN4888 dissipates a maximum power of 625 mW and has a Vce(sat) of 500mV at 1mA base current and 10mA collector current. It is presented in a standard TO-92-3 through-hole package, suitable for a wide range of electronic circuits. This device finds utility in various industrial sectors, including consumer electronics and telecommunications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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