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PN4275

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PN4275

TRANS NPN 15V 0.2A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PN4275 is a bipolar junction transistor (BJT) with an NPN configuration. This component features a collector-emitter breakdown voltage (Vce(max)) of 15 V and a maximum continuous collector current (Ic) of 200 mA. The DC current gain (hFE) is specified at a minimum of 35 at 10 mA collector current and 1 V collector-emitter voltage. The maximum power dissipation is 350 mW, with a collector cutoff current (Icbo) of 400 nA. The saturation voltage (Vce(sat)) is at most 500 mV at 10 mA base current and 100 mA collector current. This through-hole device is supplied in a TO-92-3 package. The PN4275 is suitable for applications in consumer electronics and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max350 mW

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