PN4250A
TRANS PNP 60V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN4250A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage (Vce(max)) of 60 V and a continuous collector current (Ic(max)) of 500 mA, this component is suitable for moderate power handling. Its DC current gain (hFE) is a minimum of 250 at 100 µA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 250 mV when operating at 500 µA base current and 10 mA collector current. This transistor exhibits a low collector cutoff current (ICBO) of 10 nA, ensuring minimal leakage. With a maximum power dissipation of 625 mW, it operates across a wide temperature range of -55°C to 150°C. The PN4250A is housed in a through-hole TO-92-3 (TO-226-3) package, commonly utilized in industrial control, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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