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PN3646

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PN3646

TRANS NPN 15V 0.3A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi PN3646 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 300 mA and a collector-emitter breakdown voltage (Vceo) of 15 V. With a minimum DC current gain (hFE) of 30 at 30 mA and 400 mV, it offers reliable amplification characteristics. The transistor has a maximum power dissipation of 350 mW and a Vce saturation of 500 mV at 3 mA collector current. Packaged in a TO-92-3 (TO-226-3) through-hole package, the PN3646 is suitable for use in industrial control and consumer electronics. It operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 3mA, 300mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 400mV
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max350 mW

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