PN3642
TRANS NPN 45V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN3642 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vceo) of 45V and a continuous collector current (Ic) capability of up to 500mA. With a maximum power dissipation of 625mW and a DC current gain (hFE) of a minimum of 40 at 150mA and 10V, the PN3642 offers reliable performance. It exhibits a saturation voltage (Vce(sat)) of 220mV at 15mA base current and 150mA collector current. The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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