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PN3569

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PN3569

TRANS NPN 40V 0.5A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PN3569 is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 500mA. The PN3569 exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 1V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 250mV at 15mA base current and 150mA collector current. With a maximum power dissipation of 625mW, this transistor is housed in a TO-92-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C. This device finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 15mA, 150mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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