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PN3566

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PN3566

TRANS NPN 30V 0.6A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi PN3566 is a bipolar junction transistor (BJT) featuring an NPN configuration. This component is rated for a collector-emitter breakdown voltage of 30V and a continuous collector current of up to 600mA, with a maximum power dissipation of 625mW. The device exhibits a minimum DC current gain (hFE) of 150 at 10mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is a maximum of 1V at 10mA base current and 100mA collector current. The PN3566 is supplied in a TO-92-3 package, suitable for through-hole mounting. This transistor is commonly utilized in general-purpose amplification and switching applications across various electronic systems, including consumer electronics and industrial control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1V @ 10mA, 100mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 10mA, 10V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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