PN3565
TRANS NPN 25V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's PN3565 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 25V collector-emitter breakdown voltage (Vce(max)) and a maximum continuous collector current (Ic(max)) of 500mA. The device exhibits a minimum DC current gain (hFE) of 150 at 1mA collector current and 10V collector-emitter voltage. Power dissipation is rated at 625mW, with a maximum Vce(sat) of 350mV at 100µA base current and 1mA collector current. The transistor is housed in a TO-92-3 package, requiring through-hole mounting. Operating temperature range is from -55°C to 150°C. Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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