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PN2907TAR

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PN2907TAR

TRANS PNP 40V 0.8A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PN2907TAR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vce) of 40 V. The minimum DC current gain (hFE) is specified at 100 for an Ic of 150 mA and Vce of 10 V. It offers a maximum power dissipation of 625 mW and a collector cutoff current (Icbo) of 20 nA. The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C. This device is commonly utilized in industrial control, consumer electronics, and automotive sectors. The PN2907TAR is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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