PN2222TA
TRANS NPN 30V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN2222TA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 625mW, it is suitable for various electronic circuits. The DC current gain (hFE) is rated at a minimum of 100 at 150mA collector current and 10mV collector-emitter voltage. The saturation voltage (Vce(sat)) is 1V maximum at 50mA base current and 500mA collector current. This device is housed in a TO-92-3 package, suitable for through-hole mounting. The PN2222TA finds application in consumer electronics, industrial controls, and communication systems. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10mV |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |