PN2222G
TRANS NPN 30V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's PN2222G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce(max)) of 30V and a continuous collector current (Ic(max)) of 600mA. The PN2222G offers a transition frequency (fT) of 250MHz and a maximum power dissipation (Pd(max)) of 625mW. Its DC current gain (hFE) is specified at a minimum of 100 at 150mA and 10V. The transistor is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include consumer electronics and various industrial control systems. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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