PN2222ATAR
TRANS NPN 40V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PN2222ATAR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a transition frequency of 300MHz. Its maximum power dissipation is rated at 625mW. The TO-92-3 package with formed leads is suitable for board-level integration. Key parameters include a collector cutoff current of 10nA (ICBO) and a Vce saturation voltage of 1V at 50mA collector current driven by 50mA base current. This transistor is commonly utilized in consumer electronics, industrial control systems, and automotive applications requiring reliable switching and amplification. The component is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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