PN200A
TRANS PNP 45V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PN200A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vceo) of 45V and a continuous collector current (Ic) capability of up to 500mA. With a transition frequency (fT) of 250MHz and a maximum power dissipation of 625mW, it is suitable for various electronic designs. The PN200A utilizes a TO-92-3 through-hole package, facilitating easy integration into printed circuit boards. Typical applications include linear amplification, switching circuits, and control functions across consumer electronics and industrial automation. Key parameters include a minimum DC current gain (hFE) of 300 at 10mA/1V and a collector-emitter saturation voltage (Vce(sat)) of 400mV at 20mA/200mA. It maintains operation across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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