PN100A
TRANS NPN 45V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PN100A is a Bipolar Junction Transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 500mA. Its transition frequency is specified at 250MHz, with a maximum power dissipation of 625mW. The device exhibits a minimum DC current gain (hFE) of 300 at 10mA collector current and 1V collector-emitter voltage. Collector cutoff current is a maximum of 50nA. Saturation voltage (Vce(sat)) is 400mV at 20mA base current and 200mA collector current. The PN100A is packaged in a TO-92-3 (TO-226-3) through-hole configuration and is suitable for applications in general-purpose amplification and switching across various industrial sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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