PCP1208-TD-H
TRANS NPN 200V 0.7A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi PCP1208-TD-H is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a 200V collector-emitter breakdown voltage and a continuous collector current capability of 700mA. Featuring a transition frequency of 120MHz, it is suitable for high-frequency switching and amplification tasks. The device boasts a maximum power dissipation of 1.3W and operates efficiently with a Vce(sat) of 200mV at 35mA/350mA. Its high DC current gain (hFE) of 200 at 100mA/5V ensures robust amplification. Packaged in a TO-243AA (PCP) surface-mount configuration, it is supplied on tape and reel for automated assembly. The PCP1208-TD-H finds application in industrial automation, automotive systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 35mA, 350mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.3 W |