PCP1203-TD-H
TRANS NPN 30V 1.5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PCP1203-TD-H is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 1.5A. It features a maximum power dissipation of 1.3W and a transition frequency of 500MHz. The DC current gain (hFE) is a minimum of 200 at 100mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 225mV with 15mA base current and 750mA collector current. The current cutoff (ICBO) is 100nA. Operating junction temperature reaches 150°C. Packaged in TO-243AA (PCP) and supplied on tape and reel, this transistor is suitable for use in various industrial and commercial electronics, including power management and signal amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 225mV @ 15mA, 750mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.3 W |