PCP1203-P-TD-H
TRANS NPN 30V 1.5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PCP1203-P-TD-H is a high-performance NPN bipolar junction transistor designed for demanding electronic applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1.5A, making it suitable for power switching and amplification tasks. With a transition frequency of 500MHz and a maximum power dissipation of 1.3W, it delivers efficient operation. The device offers a minimum DC current gain (hFE) of 200 at 100mA and 2V, with a Vce saturation of 225mV at 15mA and 750mA. Packaged in a TO-243AA (PCP) for surface mounting and supplied on tape and reel (TR), this transistor is ideal for use in automotive, industrial, and telecommunications sectors. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 225mV @ 15mA, 750mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.3 W |
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