P2N2907AZL1
TRANS PNP 60V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi P2N2907AZL1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it supports efficient operation in various electronic designs. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. Packaged in a TO-92 (TO-226) through-hole configuration with formed leads, this device is supplied in Tape & Box packaging. The P2N2907AZL1 is suitable for use in industrial control, consumer electronics, and telecommunications equipment. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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