P2N2907ARL1G
TRANS PNP 60V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi P2N2907ARL1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60 V and a maximum continuous collector current (Ic) of 600 mA. With a transition frequency (fT) of 200 MHz and a power dissipation of 625 mW, it is suitable for various electronic circuits. The P2N2907ARL1G exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. It is packaged in a TO-92 (TO-226) through-hole package and supplied on tape and reel. This component finds utility in consumer electronics, industrial automation, and communications infrastructure. The maximum collector cutoff current is specified at 10 nA, and Vce(sat) is 1.6 V at 50 mA collector current and 500 mA base current. The operating temperature range for this device is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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