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P2N2907A

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P2N2907A

TRANS PNP 60V 0.6A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi P2N2907A is a PNP bipolar junction transistor with a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. This device features a transition frequency of 200MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. It exhibits a Vce saturation of 1.6V at 50mA and 500mA. The transistor is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include general-purpose amplification and switching in consumer electronics, industrial control systems, and telecommunications infrastructure. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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