P2N2222ARL1G
TRANS NPN 40V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi P2N2222ARL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 40V and can handle a continuous collector current of up to 600mA. Its transition frequency is 300MHz, making it suitable for moderate frequency operations. The P2N2222ARL1G offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (Vce(sat)) of 1V at 50mA collector current and 500mA base current. Dissipating a maximum power of 625mW, it is supplied in a TO-92 (TO-226) package for through-hole mounting and is available on tape and reel (TR). This transistor is commonly utilized in industrial automation, consumer electronics, and communications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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