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P2N2222ARL1

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P2N2222ARL1

TRANS NPN 40V 0.6A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi P2N2222ARL1 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 600mA. It offers a transition frequency of 300MHz, making it suitable for moderate frequency operations. The device dissipates a maximum power of 625mW and is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a collector-emitter saturation voltage of 1V at 50mA and 500mA. The operating temperature range is -55°C to 150°C. This transistor is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment. The P2N2222ARL1 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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