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P2N2222AG

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P2N2222AG

TRANS NPN 40V 0.6A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi P2N2222AG is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 625mW, it offers robust performance. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. The transistor is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include consumer electronics, industrial control systems, and telecommunications infrastructure. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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