NZT6717
TRANS NPN 80V 1.2A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NZT6717 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification. Featuring a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1.2A, this component is suitable for power handling in various applications. With a maximum power dissipation of 1W and a low saturation voltage of 350mV at 250mA collector current, the NZT6717 offers efficient operation. Its minimum DC current gain (hFE) is 50 at 250mA and 1V. The transistor is housed in a compact SOT-223-4 surface-mount package (TO-261-4, TO-261AA) and is supplied on tape and reel. This device finds application in consumer electronics, industrial control, and power management circuits. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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