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NZT651

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NZT651

TRANS NPN 60V 4A SOT223-4

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi NZT651 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a maximum continuous collector current (Ic) of 4A. With a transition frequency (fT) of 75MHz and a maximum power dissipation of 1.2W, it is suitable for power switching and amplification tasks. The DC current gain (hFE) is a minimum of 40 at 2A collector current and 2V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV for a 200mA base current and 2A collector current. Packaged in a SOT-223-4 (TO-261-4, TO-261AA), this transistor operates within a temperature range of -55°C to 150°C. It finds use in industrial controls and power management applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2A, 2V
Frequency - Transition75MHz
Supplier Device PackageSOT-223-4
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.2 W

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