NZT44H8
TRANS NPN 60V 8A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NZT44H8 is an NPN bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This through-hole component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 8A, making it suitable for demanding power management tasks. The device offers a transition frequency of 50MHz and a maximum power dissipation of 1.5W. Key specifications include a minimum DC current gain (hFE) of 40 at 4A and 1V, and a saturation voltage (Vce Sat) of 1V at 400mA and 8A. The transistor type is NPN, and it is supplied in a SOT-223-4 (TO-261-4, TO-261AA) package, suitable for surface mounting. The operating temperature range is -55°C to 150°C. This component finds application in power supplies, motor control, and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.5 W |
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