NSVBSP19AT1G
TRANS NPN 350V 0.1A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSVBSP19AT1G is an NPN bipolar junction transistor designed for high voltage applications. This component features a 350V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation rating of 800mW. The device offers a transition frequency of 70MHz and a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at 500mV maximum for a 4mA base current and 50mA collector current. The NSVBSP19AT1G is housed in a SOT-223 (TO-261) surface mount package, suitable for operation across a wide temperature range of -65°C to 150°C. This transistor is commonly utilized in power supply circuits, lighting controls, and general-purpose amplification stages across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
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