NSVBC857CWT1G-M02
NSVBC857CWT1G-M02Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSVBC857CWT1G-M02 is an Automotive, AEC-Q101 qualified NPN bipolar junction transistor. This device features a 45 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. With a transition frequency of 100 MHz and a power dissipation of 150 mW, it is suitable for applications requiring moderate switching and amplification. The DC current gain (hFE) is a minimum of 420 at 2 mA collector current and 5 V collector-emitter voltage. The transistor exhibits a Vce(sat) of 650 mV at 5 mA base current and 100 mA collector current. It is packaged in an SC-70-3 (SOT323) surface-mount format and supplied on tape and reel. Typical applications include automotive electronics and general-purpose amplification and switching circuits within the automotive sector.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
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