NSVBC857CWT1G-M01
NSVBC857CWT1G-M01Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSVBC857CWT1G-M01 is a bipolar junction transistor (BJT) designed for automotive applications, meeting AEC-Q101 standards. This NPN transistor features a maximum collector-emitter breakdown voltage of 45 V and a continuous collector current capability of 100 mA. With a transition frequency of 100 MHz and a maximum power dissipation of 150 mW, it is suitable for general-purpose switching and amplification tasks. The DC current gain (hFE) is specified at a minimum of 420 at 2 mA collector current and 5 V collector-emitter voltage, with a Vce saturation of 650 mV at 5 mA base current and 100 mA collector current. It exhibits a low collector cutoff current of 15 nA (ICBO). The NSVBC857CWT1G-M01 is provided in a surface mount SC-70-3 (SOT323) package, operating across an extended temperature range of -55°C to 150°C. This component is commonly utilized in automotive control systems and various electronic subsystems where reliable BJT performance is critical.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
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