NSVBC849BLT1G
TRANSISTORManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi NSVBC849BLT1G is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 30 V and a maximum collector current of 100 mA. It features a transition frequency of 100 MHz and a maximum power dissipation of 300 mW. The DC current gain (hFE) is a minimum of 200 at 2 mA collector current and 5 V collector-emitter voltage. The transistor exhibits a Vce(sat) of 600 mV at 5 mA base current and 100 mA collector current. It is qualified to AEC-Q101 standards and is suitable for automotive applications. The NSVBC849BLT1G is supplied in a SOT-23-3 (TO-236) package. Typical applications include general-purpose amplification and switching circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
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