NSV60200SMTWTBG
TRANS PNP 60V 2A 6WDFNManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSV60200SMTWTBG is a PNP bipolar junction transistor designed for efficient power switching and amplification. This component offers a collector-emitter breakdown voltage of 60V, a continuous collector current capability of 2A, and a maximum power dissipation of 1.8W. Featuring a transition frequency of 155MHz and a minimum DC current gain (hFE) of 150 at 100mA and 2V, it provides robust performance for demanding applications. The device exhibits a Vce saturation of 450mV at 200mA collector current and 200mA base current. Packaged in a 6-WDFN (2x2) with an exposed pad for enhanced thermal management, and supplied on tape and reel, the NSV60200SMTWTBG is suitable for surface mounting. Its operational temperature range is -55°C to 150°C. This transistor finds application in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 2V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | 6-WDFN (2x2) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.8 W |
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